Characteristics of SONOS-Type Flash Memory With In Situ Embedded Silicon Nanocrystals

• Published in: IEEE transactions on electron devices 2010-08, Vol.57 (8), p.1895-1902
• Main Authors: Tsung-Yu Chiang, Yi-Hong Wu, Ma, William Cheng-Yu, Po-Yi Kuo, Kuan-Ti Wang, Chia-Chun Liao, Chi-Ruei Yeh, Wen-Luh Yang, Tien-Sheng Chao
• Format: Article
• Language: English
• Subjects: Applied sciences; Charge; Charge carrier processes; Compound structure devices; Design. Technologies. Operation analysis. Testing; Devices; Durability; Electric potential; Electronics; Exact sciences and technology; Flash memory; In situ; Integrated circuits; Integrated circuits by function (including memories and processors); Logic gates; memory window; Nanocrystals; nonvolatile memory; Programming; retention time; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; silicon nanocrystal (Si-NC); SONOS devices; Tunneling; Voltage; Windows (intervals)
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2010.2051489

In this paper, silicon-oxide-nitride-oxide-semiconductor (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method with multilevel and 2-b/cell operation have been successfully demonstrated. The proposed in situ Si-NC deposition method exhibits the advantages of low cost, simplicity, and compatibility with modern IC processes. SONOS memories with embedded Si-NCs exhibit a significantly improved performance with a large memory window (> 5.5 V), low operating voltage (P/E voltage: V g = 6 V, V d = 7 V and V g = -7 V, V d = 10 V, respectively), greater tolerable gate and drain disturbance (V t shift 10 8 s for 13% charge loss), and excellent endurance performance (after 10 4 P/E cycles with a memory window of 3 V).