Electrical Instability of the a-Si:H TFTs Fabricated by Maskless Laser-Write Lithography on a Spherical Surface

We fabricated and characterized hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with a channel length of 10 on both spherical and flat surfaces using maskless laser-write lithography (LWL). In addition to the electrical performance, the threshold voltage shift of the a-Si:H TFT...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2011-01, Vol.58 (1), p.160-164
Main Authors: Geonwook Yoo, Radtke, D, Gwanghyeon Baek, Zeitner, U D, Kanicki, J
Format: Article
Language:English
Subjects:
Amorphous silicon (a-Si)
Channels
Devices
Flat surfaces
Lithography
maskless laser-write lithography (LWL)
nonplanar surface
Pixel
Semiconductor devices
Stress
Substrates
Surface treatment
Thin film transistors
thin-film transistor (TFT)
Threshold voltage
threshold voltage shift
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Summary:We fabricated and characterized hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with a channel length of 10 on both spherical and flat surfaces using maskless laser-write lithography (LWL). In addition to the electrical performance, the threshold voltage shift of the a-Si:H TFT under bias-temperature stress is investigated and discussed in comparison to a device fabricated on a flat surface. The obtained results show that the a-Si:H TFTs fabricated by LWL method on a curved surface are suitable for pixel switches and circuits, which are needed to realize image sensor arrays and/or displays on a nonplanar surface.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2010.2088403