Characterization and Design of Through-Silicon Via Arrays in Three-Dimensional ICs Based on Thermomechanical Modeling

A general approach has been proposed for predicting the temperature and thermal stress fields of through-silicon-via (TSV) arrays in 3-D integrated circuits (ICs) based on a coupled-field finite-element (FE) method. The heat source under consideration is the active device layers of the ICs that are...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2011-02, Vol.58 (2), p.279-287
Main Authors: Zhang, Chunbo, Li, Leijun
Format: Article
Language:English
Subjects:
Applied sciences
Array
Arrays
Circuit properties
Design. Technologies. Operation analysis. Testing
Devices
Digital circuits
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
finite element (FE)
Finite element method
Heat sources
Heating
Integrated circuits
integrated circuits (ICs)
Joining
Mathematical analysis
Mathematical models
modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Stress
temperature
Temperature measurement
Thermal stresses
Thermomechanical processes
through-silicon via (TSV)
Through-silicon vias
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Summary:A general approach has been proposed for predicting the temperature and thermal stress fields of through-silicon-via (TSV) arrays in 3-D integrated circuits (ICs) based on a coupled-field finite-element (FE) method. The heat source under consideration is the active device layers of the ICs that are operating under load. Individual and combined effects of TSV array parameters, including TSV height, diameter, spacing, and array size, on die temperature and thermal stress are predicted. Good linear relationships are identified between the proposed TSV array parameters and predicted temperature and thermal stress fields of the ICs. A 3-D FE model of two-stack field-programmable gate arrays with an embedded TSV array has been built and validated with an analytical model and verified by experimental measurements.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2010.2089987