An Efficient Robust Algorithm for the Surface-Potential Calculation of Independent DG MOSFET

Although the recently proposed single-implicit-equation-based input voltage equations (IVEs) for the independent double-gate (IDG) MOSFET promise faster computation time than the earlier proposed coupled-equations-based IVEs, it is not clear how those equations could be solved inside a circuit simul...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2011-06, Vol.58 (6), p.1663-1671
Main Authors: Jandhyala, S, Mahapatra, S
Format: Article
Language:English
Subjects:
Algorithms
Applied sciences
Bias
Circuit simulation
Circuits
compact modeling
Computation
Computer simulation
Convergence
Devices
double-gate MOSFET
Electric potential
Electric, optical and optoelectronic circuits
Electronics
Equations
Exact sciences and technology
input voltage equations (IVEs)
Logic gates
Mathematical analysis
Mathematical model
MOSFET circuits
MOSFETs
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Studies
Theoretical study. Circuits analysis and design
Transistors
Upper bound
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Although the recently proposed single-implicit-equation-based input voltage equations (IVEs) for the independent double-gate (IDG) MOSFET promise faster computation time than the earlier proposed coupled-equations-based IVEs, it is not clear how those equations could be solved inside a circuit simulator as the conventional Newton-Raphson (NR)-based root finding method will not always converge due to the presence of discontinuity at the G-zero point (GZP) and nonremovable singularities in the trigonometric IVE. In this paper, we propose a unique algorithm to solve those IVEs, which combines the Ridders algorithm with the NR-based technique in order to provide assured convergence for any bias conditions. Studying the IDG MOSFET operation carefully, we apply an optimized initial guess to the NR component and a minimized solution space to the Ridders component in order to achieve rapid convergence, which is very important for circuit simulation. To reduce the computation budget further, we propose a new closed-form solution of the IVEs in the near vicinity of the GZP. The proposed algorithm is tested with different device parameters in the extended range of bias conditions and successfully implemented in a commercial circuit simulator through its Verilog-A interface.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2011.2131654