Measurement and Compact Modeling of 1/f Noise in HV-MOSFETs

This paper investigates 1/ f noise behavior under low and high drain biases of high-voltage metal-oxide-semiconductor field-effect transistors (MOSFETs) (HV-MOSFETs). A dedicated setup is presented which allows measuring low-frequency (LF) noise of lateral double-diffused MOSFETs (LDMOSFETs) up to 2...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2013-02, Vol.60 (2), p.670-676
Main Authors: Mavredakis, N., Bucher, M., Friedrich, R., Bazigos, A., Krummenacher, F., Sallese, J., Gneiting, T., Pflanzl, W., Seebacher, E.
Format: Article
Language:English
Subjects:
Current measurement
hbox{1}/f noise
High-voltage (HV) metal-oxide-semiconductor field-effect transistor (MOSFET) (HV-MOSFET)
lateral double-diffused MOSFET (LD-MOSFET)
low-frequency (LF) noise
Low-frequency noise
Noise measurement
Semiconductor device measurement
Transistors
Voltage measurement
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Summary:This paper investigates 1/ f noise behavior under low and high drain biases of high-voltage metal-oxide-semiconductor field-effect transistors (MOSFETs) (HV-MOSFETs). A dedicated setup is presented which allows measuring low-frequency (LF) noise of lateral double-diffused MOSFETs (LDMOSFETs) up to 200 V at the drain. LF noise spectra of n- and p-channel LDMOSFETs were measured over a large range of gate and drain bias conditions and modeled using a recently established physics-based compact model of HV-MOSFETs. The investigated devices confirm that the overall noise is mostly dominated by the noise originating in the channel, while the drift-region-generated noise only is apparent in linear operation.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2012.2230329