200 V Superjunction N-Type Lateral Insulated-Gate Bipolar Transistor With Improved Latch-Up Characteristics

• Published in: IEEE transactions on electron devices 2013-04, Vol.60 (4), p.1412-1415
• Main Authors: Tee, Elizabeth Kho Ching, Antoniou, M., Udrea, F., Holke, A., Pilkington, S. J., Pal, D. K., Yew, N. L., Abidin, W. A. B. W. Z.
• Format: Article
• Language: English
• Subjects: Anodes; Applied sciences; Compound structure devices; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Insulated gate bipolar transistors; Latch-up; lateral insulated-gate bipolar transistor (LIGBT); Logic gates; Other multijunction devices. Power transistors. Thyristors; partial silicon-on-insulator (SOI); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon-on-insulator; superjunction; Thyristors; Transistors; Voltage measurement
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2013.2246165

This paper evaluates the technique used to improve the latching characteristics of the 200 V n-type superjunction (SJ) lateral insulated-gate bipolar transistor (LIGBT) on a partial silicon-on-insulator. SJ IGBT devices are more prone to latch-up than standard IGBTs due to the presence of a strong pnp transistor with the p layer serving as an effective collector of holes. The initial SJ LIGBT design latches at about 23 V with a gate voltage of 5 V with a forward voltage drop (V ON ) of 2 V at 300 A/cm 2 . The latch-up current density is 1100 A/cm 2 . The latest SJ LIGBT design shows an increase in latch-up voltage close to 100 V without a significant penalty in V ON . The latest design shows a latch-up current density of 1195 A/cm 2 . The enhanced robustness against static latch-up leads to a better forward bias safe operating area.