Electrical Characteristics of / MOSCAPs and the Effect of Postdeposition Annealing Temperatures

The characteristics of Al 2 O 3 /InSb MOSCAPs processed with different postdeposition annealing (PDA) temperatures are investigated. X-ray photoelectron spectroscopy analysis shows a significant reduction of InSb-oxides after HCl plus trimethyl aluminum treatment and oxide deposition. Multifrequency...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2013-05, Vol.60 (5), p.1555-1560
Main Authors: Hai Dang Trinh, Yueh Chin Lin, Chang, Edward Yi, Ching-Ting Lee, Shin-Yuan Wang, Hong Quan Nguyen, Yu Sheng Chiu, Quang Ho Luc, Hui-Chen Chang, Chun-Hsiung Lin, Jang, Simon, Diaz, Carlos H.
Format: Article
Language:English
Subjects:
Annealing
asymmetrical C\hbox{ > }V
atomic layer deposition (ALD)
Capacitance-voltage characteristics
InSb
MOS
post deposition annealing (PDA)
Spectroscopy
Temperature sensors
{\rm Al}_{2}{\rm O}_{3}
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Summary:The characteristics of Al 2 O 3 /InSb MOSCAPs processed with different postdeposition annealing (PDA) temperatures are investigated. X-ray photoelectron spectroscopy analysis shows a significant reduction of InSb-oxides after HCl plus trimethyl aluminum treatment and oxide deposition. Multifrequency capacitance-voltage (C-V) characteristics exhibit low-frequency and asymmetrical C-V behaviors, in which capacitance in the InSb conduction band side is lower than in the valence band side. The electrical properties of the MOSCAPs are sensitive to PDA temperature and degraded significantly at PDA temperature >300 °C. This degradation is closely related to the diffusion of In, Sb into Al 2 O 3 as indicated by transmission electron microscopy analyses.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2013.2254119