Dislocation Scattering in ZnMgO/ZnO Heterostructures

The role of dislocation scattering in electron mobility in ZnMgO/ZnO heterostructures was studied. It was found that dislocation scattering was dominant in the low-electron concentration region. The total low-temperature mobility was calculated by considering dislocation scattering and interface-rou...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2013-06, Vol.60 (6), p.2077-2079
Main Authors: Sang, Ling, Yang, Shao Yan, Liu, Gui Peng, Zhao, Gui Juan, Liu, Chang Bo, Gu, Cheng Yan, Wei, Hong Yuan, Liu, Xiang Lin, Zhu, Qin Sheng, Wang, Zhan Guo
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Applied sciences
Compound structure devices
Dislocation scattering
Electric potential
Electron mobility
Electronics
Exact sciences and technology
Gallium nitride
interface-roughness scattering
mobility
Scattering
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Testing, measurement, noise and reliability
Vectors
Zinc oxide
ZnMgO/ZnO heterostructures
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Summary:The role of dislocation scattering in electron mobility in ZnMgO/ZnO heterostructures was studied. It was found that dislocation scattering was dominant in the low-electron concentration region. The total low-temperature mobility was calculated by considering dislocation scattering and interface-roughness scattering (IRS) together. The sheet density of dislocations was chosen as N dis =1.5 × 10 8 cm -2 and the IRS parameters were Δ = 5.206 and Λ = 30 Å. We obtained a good fit between our calculated results and experimental data reported in the works referenced.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2013.2255599