Investigation of Photo-Induced Hysteresis and Off-Current in Amorphous In-Ga-Zn Oxide Thin-Film Transistors Under UV Light Irradiation

We investigated the hysteresis and off-current (I off ) of amorphous In-Ga-Zn oxide thin-film transistors illuminated by 400 nm light at various intensities. Both hysteresis and I off are induced by the ionized oxygen vacancy (Vo 2+ ) that forms at the interface between the gate insulator and active...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2013-08, Vol.60 (8), p.2574-2579
Main Authors: LEE, Soo-Yeon, KWON, Jang-Yeon, HAN, Min-Koo
Format: Article
Language:English
Subjects:
Amorphous In-Ga-Zn oxide
Applied sciences
Electronics
Exact sciences and technology
Hysteresis
Interface states
Lighting
Logic gates
off-current
Photonics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
thin-film transistors
Time factors
Transistors
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Summary:We investigated the hysteresis and off-current (I off ) of amorphous In-Ga-Zn oxide thin-film transistors illuminated by 400 nm light at various intensities. Both hysteresis and I off are induced by the ionized oxygen vacancy (Vo 2+ ) that forms at the interface between the gate insulator and active layer. In our measurements, I off was much less than the estimated photocurrent. I off showed a rapid nonlinear increase with light intensity, while the photocurrent of a conventional crystalline semiconductor is expected to show a linear relationship. Furthermore, a numerical analysis suggested that the response time of Vo 2+ should be considered when analyzing the hysteresis of these devices.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2013.2266072