Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime

We report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, a...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2013-11, Vol.60 (11), p.3718-3725
Main Authors: Adamo, Gabriele, Agro, Diego, Stivala, Salvatore, Parisi, Antonino, Giaconia, Giuseppe Costantino, Busacca, Alessandro, Mazzillo, Massimo, Sanfilippo, Delfo, Fallica, Giorgio
Format: Article
Language:English
Subjects:
Applied sciences
Avalanche photodiode (APD)
Current measurement
Electronics
Exact sciences and technology
Optical sensors
Optical variables measurement
Optoelectronic devices
photodetector
Photonics
Resistors
responsivity
Semiconductor device measurement
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
silicon photomultiplier (SiPM)
single-photon avalanche diode (SPAD)
Temperature measurement
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Summary:We report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, at different reverse bias voltages and on a broad (340-820 nm) spectrum, will be shown and discussed. The device temperature was monitored, allowing us to give a physical interpretation of the measurements. The obtained results demonstrate that such novel silicon photomultipliers are suitable as sensitive power meters for low photon fluxes.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2013.2282709