Channel Hot Carrier Degradation Mechanism in Long/Short Channel n-FinFETs

The channel hot carrier degradation mechanisms in n-FinFET devices are studied. In long channel devices, interface degradation by hot carriers mainly degrades the device at the maximum impact ionization condition (V G ~ V D /2). At higher V G closer to V D , cold and hot carrier injection to the oxi...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2013-12, Vol.60 (12), p.4002-4007
Main Authors: Moonju Cho, Roussel, Philippe, Kaczer, Ben, Degraeve, Robin, Franco, Jacopo, Aoulaiche, Marc, Chiarella, Thomas, Kauerauf, Thomas, Horiguchi, Naoto, Groeseneken, Guido
Format: Article
Language:English
Subjects:
Applied sciences
Charge trapping
Degradation
Electronics
Exact sciences and technology
FinFET
hot carrier
Hot carrier injection
Impact ionization
logic device
Logic gates
multigate FET
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stress
Temperature measurement
Transistors
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Summary:The channel hot carrier degradation mechanisms in n-FinFET devices are studied. In long channel devices, interface degradation by hot carriers mainly degrades the device at the maximum impact ionization condition (V G ~ V D /2). At higher V G closer to V D , cold and hot carrier injection to the oxide bulk defect increases and dominates at the V G =V D stress condition. On the other hand, in short channel devices, hot carriers are generated continuously with respect to V G and highly at V G =V D , and this hot carrier injection into the oxide bulk defect is the main degradation mechanism.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2013.2285245