Channel Hot Carrier Degradation Mechanism in Long/Short Channel n-FinFETs

The channel hot carrier degradation mechanisms in n-FinFET devices are studied. In long channel devices, interface degradation by hot carriers mainly degrades the device at the maximum impact ionization condition (V G ~ V D /2). At higher V G closer to V D , cold and hot carrier injection to the oxi...

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Published in:IEEE transactions on electron devices 2013-12, Vol.60 (12), p.4002-4007
Main Authors: Moonju Cho, Roussel, Philippe, Kaczer, Ben, Degraeve, Robin, Franco, Jacopo, Aoulaiche, Marc, Chiarella, Thomas, Kauerauf, Thomas, Horiguchi, Naoto, Groeseneken, Guido
Format: Article
Language:English
Subjects:
Applied sciences
Charge trapping
Degradation
Electronics
Exact sciences and technology
FinFET
hot carrier
Hot carrier injection
Impact ionization
logic device
Logic gates
multigate FET
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stress
Temperature measurement
Transistors
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cited_by cdi_FETCH-LOGICAL-c293t-ce49a998b804f451497b99f31c9b89e4858bf75be4db732e21f8f2a3524aa7163
cites cdi_FETCH-LOGICAL-c293t-ce49a998b804f451497b99f31c9b89e4858bf75be4db732e21f8f2a3524aa7163
container_end_page 4007
container_issue 12
container_start_page 4002
container_title IEEE transactions on electron devices
container_volume 60
creator Moonju Cho
Roussel, Philippe
Kaczer, Ben
Degraeve, Robin
Franco, Jacopo
Aoulaiche, Marc
Chiarella, Thomas
Kauerauf, Thomas
Horiguchi, Naoto
Groeseneken, Guido
description The channel hot carrier degradation mechanisms in n-FinFET devices are studied. In long channel devices, interface degradation by hot carriers mainly degrades the device at the maximum impact ionization condition (V G ~ V D /2). At higher V G closer to V D , cold and hot carrier injection to the oxide bulk defect increases and dominates at the V G =V D stress condition. On the other hand, in short channel devices, hot carriers are generated continuously with respect to V G and highly at V G =V D , and this hot carrier injection into the oxide bulk defect is the main degradation mechanism.
doi_str_mv 10.1109/TED.2013.2285245
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subjects Applied sciences
Charge trapping
Degradation
Electronics
Exact sciences and technology
FinFET
hot carrier
Hot carrier injection
Impact ionization
logic device
Logic gates
multigate FET
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stress
Temperature measurement
Transistors
title Channel Hot Carrier Degradation Mechanism in Long/Short Channel n-FinFETs
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