High-Speed and Low-Power Ultradeep-Submicrometer III-V Heterojunctionless Tunnel Field-Effect Transistor

• Published in: IEEE transactions on electron devices 2014-02, Vol.61 (2), p.479-486
• Main Authors: Asthana, Pranav Kumar, Ghosh, Bahniman, Goswami, Yogesh, Tripathi, Ball Mukund Mani
• Format: Article
• Language: English
• Subjects: Devices; Field effect transistors; Gallium arsenide; hetero junctionless tunnel field-effect transistor (H-JLTFET); Heterojunctions; High speed; high-speed devices; indium arsenide; junctionless tunnel field-effect transistor (JLTFET); Junctions; Logic gates; Photonic band gap; Semiconductor devices; Semiconductors; Silicon; Transistors; tunnel field-effect transistor (TFET); Tunneling; Tunnels (transportation)
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2013.2295238

Tunnel field-effect transistor (TFET) devices are gaining attention because of good scalability and they have very low leakage current. However, they suffer from low ON-current and high threshold voltage. In this paper, we present III-V heterojunctionless TFET (H-JLTFET) for circuit applications. This paper elaborates on interfacing of III-V with group IV semiconductors for heterojunction. Implementing heterojunction and bandgap engineering, we found that devices have significantly improved performance with very high speed even at very low operating voltage. As there is no doping junction present, future scaling could be feasible along with much higher speed of charge carriers than in silicon. GaAs:Si, Si:Si0.3Ge0.7, Si:InAs, and GaAs:Ge, H-JLTFET interface for 20-nm gate length (EOT=2 nm) and dielectric, HfO2 at VGS=1 V and temperature of 300 K have ION of 0.02-12.5 mA/μm, ION/IOFF of 10 5 -10 12 , and subthreshold swing (average) of 16-74 mV/decade.