Experimental Investigation on Alloy Scattering in sSi/ /sSOI Quantum-Well p-MOSFET

Alloy scattering in a sSi/Si 0.5 Ge 0.5 /strained Silicon on Insulator (SOI) (sSOI) quantum-well (QW) p-MOSFET is investigated by hole density modulation through applying back-gate biases. The hole mobility under negative back-gate biases is found degraded by intensified alloy scattering at low elec...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2014-04, Vol.61 (4), p.950-952
Main Authors: Yu, Wenjie, Wu, Wangran, Zhang, Bo, Liu, Chang, Sun, Jiabao, Zhai, Dongyuan, Yu, Yuehui, Wang, Xi, Shi, Yi, Zhao, Yi, Zhao, Qing-Tai
Format: Article
Language:English
Subjects:
Alloy scattering
hole mobility
Logic gates
Metals
MOSFET circuits
quantum-well (QW)
Scattering
SiGe
Silicon
Silicon germanium
Transistors
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Summary:Alloy scattering in a sSi/Si 0.5 Ge 0.5 /strained Silicon on Insulator (SOI) (sSOI) quantum-well (QW) p-MOSFET is investigated by hole density modulation through applying back-gate biases. The hole mobility under negative back-gate biases is found degraded by intensified alloy scattering at low electrical field because more holes are distributed in the bulk Si 0.5 Ge 0.5 . At higher electrical field, the higher density of holes populated at the Si/ Si 0.5 Ge 0.5 interface and less holes in the bulk Si 0.5 Ge 0.5 result in less pronounced alloy scattering, leading to mobility enhancement under negative back-gate biases. This confirms experimentally that alloy scattering does not play a significant role in the hole mobility of sSi/ Si 0.5 Ge 0.5 /sSOI QW p-MOSFETs under normal operating mode.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2014.2304723