Electrical Instability of Double-Gate a-IGZO TFTs With Metal Source/Drain Recessed Electrodes

The electrical stability of double-gate (DG) and single-gate (SG) amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) with metal source/drain recessed electrodes on glass is investigated and compared. In the device structure of the a-IGZO TFTs, both top gate and bottom gate are d...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2014-04, Vol.61 (4), p.1109-1115
Main Authors: Gwanghyeon Baek, Linsen Bie, Abe, Katsumi, Kumomi, Hideya, Kanicki, Jerzy
Format: Article
Language:English
Subjects:
Amorphous indium-gallium-zinc-oxide (a-IGZO)
bias temperature stress (BTS)
double gate (DG)
Electrodes
Logic gates
single gate (SG)
Stress
Synchronization
Temperature measurement
Thin film transistors
thin-film transistor (TFT)
Threshold voltage
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Summary:The electrical stability of double-gate (DG) and single-gate (SG) amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) with metal source/drain recessed electrodes on glass is investigated and compared. In the device structure of the a-IGZO TFTs, both top gate and bottom gate are defined by lithography, allowing independent or synchronized biasing. Bias temperature stress (BTS) are performed on SG a-IGZO TFTs and DG a-IGZO TFTs with synchronized gate bias condition. Under both positive and negative BTS, synchronized DG a-IGZO TFTs demonstrate much smaller ΔV TH shift than SG a-IGZO TFTs.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2014.2307352