Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

In this paper, an observation of drain current instability on p-GaN gate AlGaN/GaN HEMTs is reported. Contrary to the Schottky gate AlGaN/GaN HEMTs, which show stable and consistent I d -V d curves under different pulsed conditions, the I d -V d curves for p-GaN gate AlGaN/GaN HEMTs show a dispersio...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2015-02, Vol.62 (2), p.339-345
Main Authors: Ting-Fu Chang, Tsung-Chieh Hsiao, Chih-Fang Huang, Wei-Hung Kuo, Suh-Fang Lin, Samudra, Ganesh S., Liang, Yung C.
Format: Article
Language:English
Subjects:
AlGaN/GaN
Aluminum gallium nitride
Current measurement
Gallium nitride
HEMT
HEMTs
high voltage
instability
Logic gates
MODFETs
p-GaN gate
Voltage measurement
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Summary:In this paper, an observation of drain current instability on p-GaN gate AlGaN/GaN HEMTs is reported. Contrary to the Schottky gate AlGaN/GaN HEMTs, which show stable and consistent I d -V d curves under different pulsed conditions, the I d -V d curves for p-GaN gate AlGaN/GaN HEMTs show a dispersion in the saturation region under the same pulse conditions, which cannot be explained by the trapping of electrons in the material. A model considering the trapping of holes in the p-GaN gate under different gate and drain biases is proposed to explain this new phenomenon.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2014.2352276