Variation-Aware Comparative Study of 10-nm GAA Versus FinFET 6-T SRAM Performance and Yield

This paper benchmarks the performance of gate-all-around (GAA) MOSFETs against that of optimized silicon-on-insulator FinFETs at 10-nm gate length. Variability in transistor performance due to systematic and random variations is estimated with the aid of TCAD 3-D device simulations, for both device...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2014-12, Vol.61 (12), p.3949-3954
Main Authors: Peng Zheng, Yi-Bo Liao, Damrongplasit, Nattapol, Meng-Hsueh Chiang, Tsu-Jae King Liu
Format: Article
Language:English
Subjects:
FinFET
FinFETs
gate-all-around (GAA)
Logic gates
MOSFET
Performance evaluation
six-transistor (6-T) SRAM
Solid modeling
SRAM cells
variation
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Summary:This paper benchmarks the performance of gate-all-around (GAA) MOSFETs against that of optimized silicon-on-insulator FinFETs at 10-nm gate length. Variability in transistor performance due to systematic and random variations is estimated with the aid of TCAD 3-D device simulations, for both device structures. The yield of six-transistor SRAM cells implemented with these advanced MOSFET structures is then investigated via a calibrated physically based compact model. The GAA MOSFET technology is projected to provide for 0.1 V lower minimum cell operating voltage with reduced cell area.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2014.2360351