Multilayered Barium Titanate Thin Films by Sol-Gel Method for Nonvolatile Memory Application

The modification of multispin casting multilayered barium titanate (BTO) thin films on indium tin oxide (ITO)/glass substrate without doping other elements is adopted to improve the memory performance. The X-ray photoelectron spectroscopy analysis reveals the concentration of oxygen vacancies can be...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2014-12, Vol.61 (12), p.4090-4097
Main Authors: Chang, Yu-Chi, Xue, Ren-Yang, Wang, Yeong-Her
Format: Article
Language:English
Subjects:
Barium titanate (BTO)
Electrodes
Indium tin oxide
memory
multilayer
resistive random access memory (RRAM)
sol-gel
Substrates
Surface morphology
Surface treatment
Temperature measurement
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Summary:The modification of multispin casting multilayered barium titanate (BTO) thin films on indium tin oxide (ITO)/glass substrate without doping other elements is adopted to improve the memory performance. The X-ray photoelectron spectroscopy analysis reveals the concentration of oxygen vacancies can be reduced by the increasing number of the BTO layer. Mechanisms of conducting paths relating to the concentration of oxygen vacancies will also be explicated. The memory devices showed typical bipolar resistive switching behavior and an ON/OFF ratio of over 10 6 . The memory devices also exhibited outstanding uniformity. A retention time of over 10 5 s without fluctuation at room temperature and 85 °C can be achieved.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2014.2363651