Replacement and Rearrangement of an Oxide Lattice by Germanium Doping in Solution-Processed Indium-Zinc-Oxide Thin-Film Transistors

Germanium (Ge) doping effects on solution-processed indium-zinc-oxide (IZO) thin-film transistors (TFTs) were investigated. Ge doping increased the carrier concentration of Ge-doped IZO (Ge:IZO) thin films from 3.32 × 10 14 to 3.13 × 10 15 cm 3 by Ge substitution for zinc (Zn). Ge easily substituted...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2015-09, Vol.62 (9), p.2888-2893
Main Authors: Tae Soo Jung, Si Joon Kim, Chul Ho Kim, Joohye Jung, Jaewon Na, Sabri, Mardhiah Muhamad, Hyun Jae Kim
Format: Article
Language:English
Subjects:
Amorphous oxide semiconductor (AOS)
Annealing
Doping
germanium (Ge) doping
Ions
solution process
substitution process
Temperature measurement
Thin film transistors
thin-film transistors (TFTs)
Zinc
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Summary:Germanium (Ge) doping effects on solution-processed indium-zinc-oxide (IZO) thin-film transistors (TFTs) were investigated. Ge doping increased the carrier concentration of Ge-doped IZO (Ge:IZO) thin films from 3.32 × 10 14 to 3.13 × 10 15 cm 3 by Ge substitution for zinc (Zn). Ge easily substituted for Zn in the IZO active layer, due to its comparably small atomic radius. By this substitution, Ge doping provided additional valence electrons to the active layer, resulting in a value for the field-effect mobility of a Ge:IZO TFT that was almost two times greater than that of a pristine IZO TFT. Consequently, despite the Ge:IZO TFT being a quaternary system, it displayed a better electrical performance and stability at low processing temperatures, thus demonstrating the feasibility of this device for flexible displays.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2015.2455558