Comparison of the Al x Ga 1– x N/GaN Heterostructures Grown on Silicon-on-Insulator and Bulk-Silicon Substrates

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Bibliographic Details
Published in:IEEE transactions on electron devices 2016-01, Vol.63 (1), p.345-352
Main Authors: Tham, Wai Hoe, Ang, Diing Shenp, Bera, Lakshmi Kanta, Dolmanan, Surani Bin, Bhat, Thirumaleshwara N, Lin, Vivian K. X., Tripathy, Sudhiranjan
Format: Article
Language:English
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2015.2501410