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Comparison of the Al x Ga 1– x N/GaN Heterostructures Grown on Silicon-on-Insulator and Bulk-Silicon Substrates
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Published in: | IEEE transactions on electron devices 2016-01, Vol.63 (1), p.345-352 |
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Main Authors: | , , , , , , |
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Language: | English |
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cites | cdi_FETCH-LOGICAL-c880-f6b87448bad101e35d9dbc9cfd5d5b0e06ea9591d2ebf0c5c2f2f878414fa6e53 |
container_end_page | 352 |
container_issue | 1 |
container_start_page | 345 |
container_title | IEEE transactions on electron devices |
container_volume | 63 |
creator | Tham, Wai Hoe Ang, Diing Shenp Bera, Lakshmi Kanta Dolmanan, Surani Bin Bhat, Thirumaleshwara N Lin, Vivian K. X. Tripathy, Sudhiranjan |
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doi_str_mv | 10.1109/TED.2015.2501410 |
format | article |
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ispartof | IEEE transactions on electron devices, 2016-01, Vol.63 (1), p.345-352 |
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language | eng |
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source | IEEE Electronic Library (IEL) Journals |
title | Comparison of the Al x Ga 1– x N/GaN Heterostructures Grown on Silicon-on-Insulator and Bulk-Silicon Substrates |
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