Wavy Channel TFT-Based Digital Circuits

We report a wavy channel (WC) architecture thin-film transistor-based digital circuitry using ZnO as a channel material. The novel architecture allows for extending device width by integrating vertical finlike substrate corrugations giving rise to 50% larger device width, without occupying extra chi...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2016-04, Vol.63 (4), p.1550-1556
Main Authors: Hanna, Amir N., Hussain, Aftab, Omran, Hesham, Alsharif, Sarah M., Salama, Khaled N., Hussain, Muhammad M.
Format: Article
Language:English
Subjects:
II-VI semiconductor materials
Inverter
Inverters
Logic gates
NOR
Optical wavelength conversion
pass transistor logic multiplexer (PTL MUX)
Photovoltaic cells
Substrates
Thin film transistors
thin-film transistor (TFT)
Transistors
wavy
Zinc oxide
ZnO
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Summary:We report a wavy channel (WC) architecture thin-film transistor-based digital circuitry using ZnO as a channel material. The novel architecture allows for extending device width by integrating vertical finlike substrate corrugations giving rise to 50% larger device width, without occupying extra chip area. The enhancement in the output drive current is 100%, when compared with conventional planar architecture for devices occupying the same chip area. The current increase is attributed to both the extra device width and 50% enhancement in field-effect mobility due to electrostatic gating effects. Fabricated inverters show that WC inverters can achieve two times the peak-to-peak output voltage for the same input when compared with planar devices. In addition, WC inverters show 30% faster rise and fall times, and can operate up to around two times frequency of the planar inverters for the same peak-to-peak output voltage. WC NOR circuits have shown 70% higher peak-to-peak output voltage, over their planar counterparts, and WC pass transistor logic multiplexer circuit has shown more than five times faster high-to-low propagation delay compared with its planar counterpart at a similar peak-to-peak output voltage.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2016.2527795