Self-Heating Measurement of 14-nm FinFET SOI Transistors Using 2-D Time-Resolved Emission

Self-heating of FinFET transistors is a reliability concern, especially for large devices with dense arrays of fins on Silicon On Insulator. In this paper, device-level temperature measurements acquired using an optical technique are presented. The 2-D time-resolved emission measurements through the...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2016-05, Vol.63 (5), p.2016-2022
Main Authors: Stellari, Franco, Jenkins, Keith A., Weger, Alan J., Linder, Barry P., Peilin Song
Format: Article
Language:English
Subjects:
Cameras
FinFET
FinFETs
Logic gates
Photonics
picosecond imaging for circuit analysis (PICA)
self-heating
Silicon On Insulator
Temperature
Temperature measurement
time-resolved emission (TRE)
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Summary:Self-heating of FinFET transistors is a reliability concern, especially for large devices with dense arrays of fins on Silicon On Insulator. In this paper, device-level temperature measurements acquired using an optical technique are presented. The 2-D time-resolved emission measurements through the substrate are used to monitor the temperature-dependent modulation of the OFF-state leakage current of individual transistors, noninvasively and with high time accuracy. Different device geometries and operating conditions are evaluated and compared.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2016.2537054