Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study

We propose a model Hamiltonian for van der Waals tunnel transistors (vdW-TFETs) relying on few physical parameters calibrated against density functional theory (DFT) band structure calculations. Based on this model, we develop a fully 3-D nonequilibrium Green's function simulator including elec...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2016-11, Vol.63 (11), p.4388-4394
Main Authors: Jiang Cao, Logoteta, Demetrio, Ozkaya, Sibel, Biel, Blanca, Cresti, Alessandro, Pala, Marco G., Esseni, David
Format: Article
Language:English
Subjects:
Discrete Fourier transforms
Engineering Sciences
Logic gates
Mathematical model
Micro and nanotechnologies
Microelectronics
Nonequilibrium Green’s function (NEGF)
Phonons
Scattering
steep slope
Transistors
transition metal dichalcogenides
tunnel FET (TFET)
Tunneling
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Summary:We propose a model Hamiltonian for van der Waals tunnel transistors (vdW-TFETs) relying on few physical parameters calibrated against density functional theory (DFT) band structure calculations. Based on this model, we develop a fully 3-D nonequilibrium Green's function simulator including electron-phonon scattering, and we investigate some fundamental aspects and design challenges related to vdW-TFETs based on single-layer MoS2 and WTe2. In particular, we devote a specific analysis to the impact of top gate alignment and back-oxide thickness on the device performance. Our results suggest that the vdW-TFETs can provide very small values of subthreshold swing (SS) and fairly good ON-state current. However, these devices also pose specific design challenges related to the geometrical features of gated regions, and their ultimate SS may be lower limited by inelastic phonon scattering.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2016.2605144