Hybrid Open Drain Method and Fully Current-Based Characterization of Asymmetric Resistance Components in a Single MOSFET

Separate extraction of source (RS) from drain resistance (RD) is important in the systematic modeling of electrical characteristics and investigation of physical mechanism related to the performance and reliability in MOSFETs and their integrated circuits. We report a hybrid open drain method (ODM),...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2016-11, Vol.63 (11), p.4196-4200
Main Authors: Kim, Jaewon, Lee, Heesung, Kim, Seong Kwang, Kim, Junyeap, Park, Jaewon, Choi, Sung-Jin, Kim, Dae Hwan, Kim, Dong Myong
Format: Article
Language:English
Subjects:
Customer relationship management
Degradation
Drain resistance
Integrated circuit modeling
MOSFET
open drain method (ODM)
Resistance
separate extraction
single MOSFET
source resistance
substrate resistance
Substrates
Transconductance
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Summary:Separate extraction of source (RS) from drain resistance (RD) is important in the systematic modeling of electrical characteristics and investigation of physical mechanism related to the performance and reliability in MOSFETs and their integrated circuits. We report a hybrid open drain method (ODM), as a fully current-based characterization technique, for a comprehensive separation of asymmetric source and drain resistance components in a single MOSFET. In the hybrid ODM, the ODM through the parasitic bipolar transistor is combined with the dual-sweep combinational transconductance technique, the channel resistance method, and the parasitic junction current method. We fully considered the asymmetry in the source and the drain possibly caused by the layout, process, and degradation under bias. We successfully extracted the resistance components with R Se = 6.66-7.35 Q, R De = 7.64-8.34 Q, R So = 0.78-8.07 Q, R Do = 1.11-10.08 Q, and R SUB = 6.29-9.17 Q in the n-channel MOSFETs. R Se (R De ) is the V GS -independent external source (drain) resistance. R So (R Do ) is the VGS-independent external spreading source (drain) resistance and R Si (R Di ) is the V GS -dependent intrinsic source (drain) resistance, respectively. R SUB is the substrate resistance. The hybrid ODM is expected to be useful in the characterization of parasitic resistances in each MOSFET with asymmetry caused by the layout, process, and degradation without using multiple devices with different channel length (L) and width (W) for measurement.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2016.2607721