Analytical Drain Current Compact Model in the Depletion Operation Region of Short-Channel Triple-Gate Junctionless Transistors

A new charge-based analytical compact model for the drain current of junctionless (JL) triple-gate MOSFETs is presented, which includes the short-channel effects, the saturation velocity overshoot, the series resistance, and the mobility degradation effects. The proposed model consists of a single a...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2017-01, Vol.64 (1), p.66-72
Main Authors: Oproglidis, Theodoros A., Tsormpatzoglou, Andreas, Tassis, Dimitrios H., Karatsori, Theano A., Barraud, Sylvain, Ghibaudo, Gerard, Dimitriadis, Charalabos A.
Format: Article
Language:English
Subjects:
Analytical models
Circuits
Compact modeling
Computer simulation
Depletion
drain current
Engineering Sciences
junctionless (JL)
Logic gates
Mathematical analysis
Micro and nanotechnologies
Microelectronics
Model accuracy
MOSFET
MOSFETs
Nanowires
Semiconductor device modeling
Semiconductor devices
Silicon
Threshold voltage
Transistors
triple-gate (TG) transistors
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Summary:A new charge-based analytical compact model for the drain current of junctionless (JL) triple-gate MOSFETs is presented, which includes the short-channel effects, the saturation velocity overshoot, the series resistance, and the mobility degradation effects. The proposed model consists of a single analytical equation that covers the depletion operation region in which the bulk conduction determines the drain current. The model is supported by experimental measurements in JL nanowire transistors with channel length varying from 95 to 25 nm and doping concentration 2 x 10 19 cm -3 . The overall results reveal the very good accuracy of the proposed analytical compact model, making it suitable for circuit simulation tools.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2016.2632753