GaN-on-Si Power Technology: Devices and Applications

In this paper, we present a comprehensive review and discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are present...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2017-03, Vol.64 (3), p.779-795
Main Authors: Chen, Kevin J., Haberlen, Oliver, Lidow, Alex, Chun Lin Tsai, Ueda, Tetsuzo, Uemoto, Yasuhiro, Yifeng Wu
Format: Article
Language:English
Subjects:
Cascode configuration
Gallium nitride
gallium nitride (GaN)-on-Si
Gallium nitrides
HEMTs
Logic gates
MIS-gate
MOSFET
p-GaN gate
power device
Silicon
Substrates
Switches
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Summary:In this paper, we present a comprehensive review and discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparison with other competing power device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2017.2657579