GaN-on-Si Power Technology: Devices and Applications

In this paper, we present a comprehensive review and discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are present...

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Published in:IEEE transactions on electron devices 2017-03, Vol.64 (3), p.779-795
Main Authors: Chen, Kevin J., Haberlen, Oliver, Lidow, Alex, Chun Lin Tsai, Ueda, Tetsuzo, Uemoto, Yasuhiro, Yifeng Wu
Format: Article
Language:English
Subjects:
Cascode configuration
Gallium nitride
gallium nitride (GaN)-on-Si
Gallium nitrides
HEMTs
Logic gates
MIS-gate
MOSFET
p-GaN gate
power device
Silicon
Substrates
Switches
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cited_by cdi_FETCH-LOGICAL-c357t-ce5323ebe9792c1448e18889dd217f1a0797b37140bdeab2e12ca987b5158e963
cites cdi_FETCH-LOGICAL-c357t-ce5323ebe9792c1448e18889dd217f1a0797b37140bdeab2e12ca987b5158e963
container_end_page 795
container_issue 3
container_start_page 779
container_title IEEE transactions on electron devices
container_volume 64
creator Chen, Kevin J.
Haberlen, Oliver
Lidow, Alex
Chun Lin Tsai
Ueda, Tetsuzo
Uemoto, Yasuhiro
Yifeng Wu
description In this paper, we present a comprehensive review and discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparison with other competing power device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.
doi_str_mv 10.1109/TED.2017.2657579
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1109_TED_2017_2657579</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7862945</ieee_id><sourcerecordid>1873462701</sourcerecordid><originalsourceid>FETCH-LOGICAL-c357t-ce5323ebe9792c1448e18889dd217f1a0797b37140bdeab2e12ca987b5158e963</originalsourceid><addsrcrecordid>eNo9kE1Lw0AURQdRsFb3gpuA68R58z3uSlurUFSwrofJ5FVTaiZmWqX_3pQWV48L594Hh5BroAUAtXeL6aRgFHTBlNRS2xMyACl1bpVQp2RAKZjccsPPyUVKqz4qIdiAiJl_zmOTv9XZa_zFLltg-GziOn7s7rMJ_tQBU-abKhu17boOflPHJl2Ss6VfJ7w63iF5f5guxo_5_GX2NB7N88Cl3uQBJWccS7TasgBCGARjjK0qBnoJnmqrS65B0LJCXzIEFrw1upQgDVrFh-T2sNt28XuLaeNWcds1_UsHRnOhmKbQU_RAhS6m1OHStV395budA-r2blzvxu3duKObvnJzqNSI-I9ro5gVkv8BQztdbw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1873462701</pqid></control><display><type>article</type><title>GaN-on-Si Power Technology: Devices and Applications</title><source>IEEE Xplore (Online service)</source><creator>Chen, Kevin J. ; Haberlen, Oliver ; Lidow, Alex ; Chun Lin Tsai ; Ueda, Tetsuzo ; Uemoto, Yasuhiro ; Yifeng Wu</creator><creatorcontrib>Chen, Kevin J. ; Haberlen, Oliver ; Lidow, Alex ; Chun Lin Tsai ; Ueda, Tetsuzo ; Uemoto, Yasuhiro ; Yifeng Wu</creatorcontrib><description>In this paper, we present a comprehensive review and discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparison with other competing power device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2017.2657579</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Cascode configuration ; Gallium nitride ; gallium nitride (GaN)-on-Si ; Gallium nitrides ; HEMTs ; Logic gates ; MIS-gate ; MOSFET ; p-GaN gate ; power device ; Silicon ; Substrates ; Switches</subject><ispartof>IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.779-795</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c357t-ce5323ebe9792c1448e18889dd217f1a0797b37140bdeab2e12ca987b5158e963</citedby><cites>FETCH-LOGICAL-c357t-ce5323ebe9792c1448e18889dd217f1a0797b37140bdeab2e12ca987b5158e963</cites><orcidid>0000-0002-0659-2022</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7862945$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Chen, Kevin J.</creatorcontrib><creatorcontrib>Haberlen, Oliver</creatorcontrib><creatorcontrib>Lidow, Alex</creatorcontrib><creatorcontrib>Chun Lin Tsai</creatorcontrib><creatorcontrib>Ueda, Tetsuzo</creatorcontrib><creatorcontrib>Uemoto, Yasuhiro</creatorcontrib><creatorcontrib>Yifeng Wu</creatorcontrib><title>GaN-on-Si Power Technology: Devices and Applications</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>In this paper, we present a comprehensive review and discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparison with other competing power device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.</description><subject>Cascode configuration</subject><subject>Gallium nitride</subject><subject>gallium nitride (GaN)-on-Si</subject><subject>Gallium nitrides</subject><subject>HEMTs</subject><subject>Logic gates</subject><subject>MIS-gate</subject><subject>MOSFET</subject><subject>p-GaN gate</subject><subject>power device</subject><subject>Silicon</subject><subject>Substrates</subject><subject>Switches</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNo9kE1Lw0AURQdRsFb3gpuA68R58z3uSlurUFSwrofJ5FVTaiZmWqX_3pQWV48L594Hh5BroAUAtXeL6aRgFHTBlNRS2xMyACl1bpVQp2RAKZjccsPPyUVKqz4qIdiAiJl_zmOTv9XZa_zFLltg-GziOn7s7rMJ_tQBU-abKhu17boOflPHJl2Ss6VfJ7w63iF5f5guxo_5_GX2NB7N88Cl3uQBJWccS7TasgBCGARjjK0qBnoJnmqrS65B0LJCXzIEFrw1upQgDVrFh-T2sNt28XuLaeNWcds1_UsHRnOhmKbQU_RAhS6m1OHStV395budA-r2blzvxu3duKObvnJzqNSI-I9ro5gVkv8BQztdbw</recordid><startdate>20170301</startdate><enddate>20170301</enddate><creator>Chen, Kevin J.</creator><creator>Haberlen, Oliver</creator><creator>Lidow, Alex</creator><creator>Chun Lin Tsai</creator><creator>Ueda, Tetsuzo</creator><creator>Uemoto, Yasuhiro</creator><creator>Yifeng Wu</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-0659-2022</orcidid></search><sort><creationdate>20170301</creationdate><title>GaN-on-Si Power Technology: Devices and Applications</title><author>Chen, Kevin J. ; Haberlen, Oliver ; Lidow, Alex ; Chun Lin Tsai ; Ueda, Tetsuzo ; Uemoto, Yasuhiro ; Yifeng Wu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c357t-ce5323ebe9792c1448e18889dd217f1a0797b37140bdeab2e12ca987b5158e963</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Cascode configuration</topic><topic>Gallium nitride</topic><topic>gallium nitride (GaN)-on-Si</topic><topic>Gallium nitrides</topic><topic>HEMTs</topic><topic>Logic gates</topic><topic>MIS-gate</topic><topic>MOSFET</topic><topic>p-GaN gate</topic><topic>power device</topic><topic>Silicon</topic><topic>Substrates</topic><topic>Switches</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Kevin J.</creatorcontrib><creatorcontrib>Haberlen, Oliver</creatorcontrib><creatorcontrib>Lidow, Alex</creatorcontrib><creatorcontrib>Chun Lin Tsai</creatorcontrib><creatorcontrib>Ueda, Tetsuzo</creatorcontrib><creatorcontrib>Uemoto, Yasuhiro</creatorcontrib><creatorcontrib>Yifeng Wu</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore (Online service)</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Kevin J.</au><au>Haberlen, Oliver</au><au>Lidow, Alex</au><au>Chun Lin Tsai</au><au>Ueda, Tetsuzo</au><au>Uemoto, Yasuhiro</au><au>Yifeng Wu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>GaN-on-Si Power Technology: Devices and Applications</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2017-03-01</date><risdate>2017</risdate><volume>64</volume><issue>3</issue><spage>779</spage><epage>795</epage><pages>779-795</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In this paper, we present a comprehensive review and discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparison with other competing power device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2017.2657579</doi><tpages>17</tpages><orcidid>https://orcid.org/0000-0002-0659-2022</orcidid></addata></record>
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subjects Cascode configuration
Gallium nitride
gallium nitride (GaN)-on-Si
Gallium nitrides
HEMTs
Logic gates
MIS-gate
MOSFET
p-GaN gate
power device
Silicon
Substrates
Switches
title GaN-on-Si Power Technology: Devices and Applications
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-30T22%3A06%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=GaN-on-Si%20Power%20Technology:%20Devices%20and%20Applications&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Chen,%20Kevin%20J.&rft.date=2017-03-01&rft.volume=64&rft.issue=3&rft.spage=779&rft.epage=795&rft.pages=779-795&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2017.2657579&rft_dat=%3Cproquest_cross%3E1873462701%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c357t-ce5323ebe9792c1448e18889dd217f1a0797b37140bdeab2e12ca987b5158e963%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1873462701&rft_id=info:pmid/&rft_ieee_id=7862945&rfr_iscdi=true