Low-Loss SOI-LIGBT With Triple Deep-Oxide Trenches

• Published in: IEEE transactions on electron devices 2017-09, Vol.64 (9), p.3756-3761
• Main Authors: Zhang, Long, Zhu, Jing, Zhao, Minna, Liu, Siyang, Sun, Weifeng, Shi, Longxing
• Format: Article
• Language: English
• Subjects: Breakdown voltage (BV); Current density; deep-oxide trench; Electric breakdown; Electric potential; JFET; JFETs; ON-state voltage drop; Semiconductor device measurement; Silicon; silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT); SOI (semiconductors); Trenches; turn-OFF loss; Voltage drop
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2017.2731518

A novel 500-V silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT) is proposed for the first time in this paper. The device features triple deep oxide trenches (TDOT) arranged in the drift region. The depths of the trenches near the emitter side (T E ) and near the collector side (T C ) are shallower than that of the trench (T M ) located in the silicon region between T E and T C . Compared with a reported SOI-LIGBT with dual deep-oxide trenches (DDOT), the shallow trench near the emitter side (T E ) in the proposed TDOT SOI-LIGBT alleviates the JFET effect between the P-body region and T E , resulting in a lower on-state voltage drop (V on ). In the off-state, the electric potential sustained by the TDOT is higher than that of the DDOT. At the same breakdown voltage of 560 V, the length of silicon region between T C and N-buffer region (L 2 ) is reduced from 9 μm for the DDOT SOI-LIGBT to 5 μm for the proposed TDOT SOI-LIGBT, indicating a smaller number of stored carries at the collector side and thereby a faster turn-off in the proposed TDOT SOI-LIGBT. The experiments demonstrate that the proposed TDOT SOI-LIGBT achieves turn-off loss (E OFF ) 36.1% lower than the DDOT SOI-LIGBT at the same V on of 1.53 V.