Impact of Floating Body Effect, Back-Gate Traps, and Trap-Assisted Tunneling on Scaled In 0.53 Ga 0.47 As Ultrathin-Body MOSFETs and Mitigation Measures

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Bibliographic Details
Published in:IEEE transactions on electron devices 2018-06, Vol.65 (6), p.2578-2584
Main Authors: Sant, Saurabh, Aguirre, Paulina, Hahn, Herwig, Deshpande, Veeresh, Czornomaz, Lukas, Schenk, Andreas
Format: Article
Language:English
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2018.2824021