Radio Frequency Performance Projection and Stability Tradeoff of h-BN Encapsulated Graphene Field-Effect Transistors

Hexagonal boron nitride encapsulation significantly improves carrier transport in graphene. This paper investigates the benefit of implementing the encapsulation technique in graphene field-effect transistors (GFETs) in terms of their intrinsic radio frequency (RF) performance, adding the effect of...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2019-03, Vol.66 (3), p.1567-1573
Main Authors: Feijoo, Pedro C., Pasadas, Francisco, Iglesias, Jose M., Hamham, El Mokhtar, Rengel, Raul, Jimenez, David
Format: Article
Language:English
Subjects:
Boron nitride
Carrier transport
Computer simulation
Encapsulation
Field effect transistors
Graphene
Graphene field-effect transistors (GFETs)
hexagonal boron nitride (h-BN) encapsulated graphene
Logic gates
Mathematical model
negative differential resistance (NDR)
Power gain
Radio frequency
radio frequency (RF)
Saturation
Scattering
Semiconductor devices
stability
Stability analysis
Tradeoffs
Transistors
Transit time
Transport buildings, stations and terminals
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Hexagonal boron nitride encapsulation significantly improves carrier transport in graphene. This paper investigates the benefit of implementing the encapsulation technique in graphene field-effect transistors (GFETs) in terms of their intrinsic radio frequency (RF) performance, adding the effect of the series resistances at the terminals. For such a purpose, a drift-diffusion self-consistent simulator is prepared to get the GFET electrical characteristics. Both the mobility and saturation velocity are obtained by an ensemble Monte Carlo simulator upon considering the relevant scattering mechanisms that affect carrier transport. RF figures of merit are simulated using an accurate small-signal model. Results reveal that the cutoff frequency could scale up to the physical limit given by the inverse of the transit time. Projected maximum oscillation frequencies, in the order of few terahertz, are expected to exceed the values demonstrated by InP and Si-based RF transistors. The existing tradeoff between power gain and stability and the role played by the gate resistance are also studied. High power gain and stability are feasible even if the device is operated far away from current saturation. Finally, the benefits of device unilateralization and the exploitation of the negative differential resistance region to get negative-resistance gain are discussed.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2018.2890192