Investigation of Ta 2 O 5 as an Alternative High- ${k}$ Dielectric for InAlN/GaN MOS-HEMT on Si

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Bibliographic Details
Published in:IEEE transactions on electron devices 2019-03, Vol.66 (3), p.1230-1235
Main Authors: Kumar, Sandeep, Kumar, Himanshu, Vura, Sandeep, Pratiyush, Anamika Singh, Charan, Vanjari Sai, Dolmanan, Surani B., Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Nath, Digbijoy N.
Format: Article
Language:English
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2019.2893288