Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO 2 as a Dielectric

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Bibliographic Details
Published in:IEEE transactions on electron devices 2019-06, Vol.66 (6), p.2557-2562
Main Authors: Rawat, Akanksha, Surana, Vivek Kumar, Meer, Mudassar, Bhardwaj, Navneet, Ganguly, Swaroop, Saha, Dipankar
Format: Article
Language:English
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2019.2910608