Asymmetric-Structure-Induced Self-Rectifying in Nanoscale HfO 2 -Based RRAM Array

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Bibliographic Details
Published in:IEEE transactions on electron devices 2019-08, Vol.66 (8), p.3337-3341
Main Authors: Zhang, Xinlei, Ji, Hao, Jiang, Ran
Format: Article
Language:English
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2019.2924038