Asymmetric-Structure-Induced Self-Rectifying in Nanoscale HfO 2 -Based RRAM Array

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Published in:IEEE transactions on electron devices 2019-08, Vol.66 (8), p.3337-3341
Main Authors: Zhang, Xinlei, Ji, Hao, Jiang, Ran
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Language:English
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title Asymmetric-Structure-Induced Self-Rectifying in Nanoscale HfO 2 -Based RRAM Array
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