A Compact Statistical Model for the Low-Frequency Noise in Halo-Implanted MOSFETs: Large RTN Induced by Halo Implants

• Published in: IEEE transactions on electron devices 2019-08, Vol.66 (8), p.3521-3526
• Main Authors: Banaszeski da Silva, Mauricio, Both, Thiago H., Tuinhout, Hans P., Zegers-van Duijnhoven, Adrie, Wirth, Gilson I., Scholten, Andries J.
• Format: Article
• Language: English
• Subjects: Analytical models; Bias; Binoculars; Flicker noise; halo implants; Implants; Integrated circuit modeling; Low-frequency noise; low-frequency noise (LFN); MOS devices; MOSFET; MOSFETs; Noise; Parameters; power spectral density (PSD); Predictive models; random telegraph noise (RTN); Semiconductor device modeling; statistical model; Statistical models; temperature; Temperature dependence; variability
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2019.2924819

In this paper, we propose a novel compact statistical model for the low-frequency noise (LFN) of MOS devices with halo implants. The compact model is suited for the incorporation in modern models, such as BSIM, PSP, and EKV, and can be used to predict the dependence of the LFN of halo-implanted MOSFETs with bias, temperature, geometry, and technological parameters. This compact model is based on the physics-based random telegraph noise (RTN) model, previously published by our group. The previous model was simplified in analytical expressions dependent on parameters and on physical quantities already calculated in modern compact models. Following the physics-based model, the LFN compact model predicts the large bias dependence of the LFN statistics induced by the halo implants in long-channel devices. Moreover, we show for the first time that the halo implants also induce a large temperature dependence of the LFN statistics for devices operated near the weak inversion or saturation, and the proposed compact model predicts this dependence.