Theoretical Study of Electron Transport Properties in GaN-Based HEMTs Using a Deterministic Multi-Subband Boltzmann Transport Equation Solver

A high-electron mobility transistor (HEMT) with a GaN channel is simulated using a deterministic multi-subband Boltzmann transport equation solver. A structure that includes an InGaN back barrier is considered. The electron mobility is calculated for the 1-D heterostructure to identify the contribut...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2019-09, Vol.66 (9), p.3740-3747
Main Authors: Cha, Suhyeong, Hong, Sung-Min
Format: Article
Language:English
Subjects:
Boltzmann equation
Boltzmann transport equation
Electron mobility
Electron transport
Formulas (mathematics)
Gallium nitride
Gallium nitrides
GaN
HEMTs
Heterostructures
High electron mobility transistors
high-electron mobility transistor (HEMT)
Indium gallium nitrides
Mathematical analysis
Mathematical model
mobility
MODFETs
Phonons
polar optical phonon
Scattering
self-consistent simulation
Semiconductor devices
Transport equations
Transport properties
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Summary:A high-electron mobility transistor (HEMT) with a GaN channel is simulated using a deterministic multi-subband Boltzmann transport equation solver. A structure that includes an InGaN back barrier is considered. The electron mobility is calculated for the 1-D heterostructure to identify the contribution of each scattering mechanism to the electron mobility. For GaN-based HEMTs, electron transport in a non-equilibrium state is determined by solving the multi-subband Boltzmann equation expanded with Fourier harmonics. The polar optical phonon and the deformation potential phonon are considered to explain the scattering of the device while considering the Pauli principle. The results of a simulation conducted to assess the mobility and {I} - {V} characteristics are compared with experimental results from the AlInN/AlN/GaN/InGaN HEMT structure. The cutoff frequency of the HEMT is also estimated under the quasi-static approximation.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2019.2926857