Investigation of High-Frequency Fine Structure in the Current Output of Shaped Contact Planar Gunn Diodes

A novel gallium arsenide (GaAs) planar Gunn diode design with shaped anode and cathode contacts using Monte Carlo simulations has been shown to produce significantly higher frequency fine structure components in the output waveform than the natural transit time frequency of the diode. We have invest...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2020-05, Vol.67 (5), p.1-6
Main Authors: Mindil, A., Dunn, G. M., Khalid, A., Oxley, C. H.
Format: Article
Language:English
Subjects:
Anodes
Cathodes
Computer simulation
Diodes
Electric potential
Electric power generation
Feedback
Fine structure
Gallium arsenide
Gallium arsenide (GaAs)
Gunn diodes
high frequency
Monte Carlo
Monte Carlo methods
multiple peaks
planar Gunn diode
Shape
Time-frequency analysis
Transit time
Waveforms
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Summary:A novel gallium arsenide (GaAs) planar Gunn diode design with shaped anode and cathode contacts using Monte Carlo simulations has been shown to produce significantly higher frequency fine structure components in the output waveform than the natural transit time frequency of the diode. We have investigated devices without a feedback potential and devices with a feedback potential (in the delayed mode) and have shown 350-GHz fine structure frequency components in a device with a nominal transit time frequency of 70 GHz is possible. This is the first observation of such stable repeating high-frequency components in a Gunn diode, giving potential for very high-frequency power generation and other wave-shaping applications.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2020.2981191