Effect of Self-Assembled Monolayers (SAMs) as Surface Passivation on the Flexible a-InSnZnO Thin-Film Transistors

To overcome the environment susceptibility of flexible amorphous InSnZnO (a-ITZO) thin-film transistors (TFTs), a surface passivation method utilizing n -octyltriethoxysilane (OTES) self-assembled monolayers (SAMs) is developed. The electrical characteristics of the developed transistors indicate th...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2020-08, Vol.67 (8), p.3157-3162
Main Authors: Zhong, Wei, Yao, Ruohe, Liu, Yuan, Lan, Linfeng, Chen, Rongsheng
Format: Article
Language:English
Subjects:
Bias
Electronic devices
Flexible electronics
Monolayers
oxide thin-film transistor (TFT)
Passivation
Passivity
Rough surfaces
self-assembled monolayer (SAM)
Self-assembled monolayers
Self-assembly
Semiconductor devices
stability
Substrates
Surface morphology
Surface roughness
Thin film transistors
Threshold voltage
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:To overcome the environment susceptibility of flexible amorphous InSnZnO (a-ITZO) thin-film transistors (TFTs), a surface passivation method utilizing n -octyltriethoxysilane (OTES) self-assembled monolayers (SAMs) is developed. The electrical characteristics of the developed transistors indicate that device performance can be enhanced upon OTES passivation, exhibiting high mobility ( -.19.4 cm 2 V -1 s -1 ), a steep subthreshold slope (-.90 mV/dec), near-zero threshold voltage (-.0.6 V), and high ON- OFF current ratio (-.7.9 x 10 9 ). The passivation layer can effectively improve the stability of flexible ITZO TFTs even under positive bias stress (PBS) and negative bias stress (NBS), and only 0.8/1.3 V threshold voltage shifts are shown after PBS/NBS. In addition, the OTES-passivated transistors exhibit good mechanical reliability and maintain its electrical characteristics during the 10-k bending period, without drastic decline. These results demonstrate that the SAM passivation method is suitable for the fabrication of flexible high-performance metal-oxide electronic devices.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2020.3004420