Impact of High-k Gate Dielectric on Self-Heating Effects in PiFETs Structure

• Published in: IEEE transactions on electron devices 2020-09, Vol.67 (9), p.1-8
• Main Authors: Belkhiria, Maissa, Echouchene, Fraj, Jaba, Nejeh, Bajahzar, Abdullah, Belmabrouk, Hafedh
• Format: Article
• Language: English
• Subjects: Aluminum oxide; Bulk-metal-oxide-semiconductor field-effect transistors (bulk-MOSFETs); Computer simulation; Dielectric properties; Dielectrics; electrothermal model; Field effect transistors; Hafnium oxide; Heating; Heating systems; High temperature effects; High-k dielectric materials; high-k dielectrics; Lanthanum oxides; Mathematical model; MOSFET; MOSFETs; numerical simulation; Parameters; partially insulated field-effect transistors (PiFETs); self-heating; Semiconductor device modeling; Semiconductor devices; Silicon; Thermodynamic properties; Zirconium dioxide
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2020.3012418

In this article, we propose a 2-D study for investigating the self-heating effect in new partially insulated field-effect transistors (PiFETs) based on high-k gate dielectrics. The thermal properties have been numerically simulated and compared to those of conventional bulk-metal-oxide-semiconductor field-effect transistor (bulk-MOSFET) and PiFET structures. Several high-k materials such as ZrO₂, HfO₂, La₂O₃, and Al₂O₃ are used in order to test their impact on the temperature rise in the host lattice of new structures. A deal of interest has been paid to geometric parameters in the PiFET structures studied to further reduce the self-heating. The effects of geometrical and electrical parameters have been analyzed. As it is found, a significant reduction in temperature rise is achieved during high-power operation. This suggests that the insertion of high-k dielectric layers above the dioxide can mitigate the self-heating. More especially, Al₂O₃ has been revealed as an appropriate high-k dielectric to being recommended for the production of high-performance PiFET.