Sub-30-nm In 0.8 Ga 0.2 As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics

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Bibliographic Details
Published in:IEEE transactions on electron devices 2021-04, Vol.68 (4), p.2010-2016
Main Authors: Jo, Hyeon-Bhin, Yun, Seung-Won, Kim, Jun-Gyu, Baek, Ji-Min, Lee, In-Geun, Kim, Dae-Hyun, Kim, Tae-Woo, Kim, Sang-Kuk, Yun, Jacob, Kim, Ted, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki
Format: Article
Language:English
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2020.3045958