Sub-30-nm In 0.8 Ga 0.2 As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics

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Published in:IEEE transactions on electron devices 2021-04, Vol.68 (4), p.2010-2016
Main Authors: Jo, Hyeon-Bhin, Yun, Seung-Won, Kim, Jun-Gyu, Baek, Ji-Min, Lee, In-Geun, Kim, Dae-Hyun, Kim, Tae-Woo, Kim, Sang-Kuk, Yun, Jacob, Kim, Ted, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki
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cited_by cdi_FETCH-LOGICAL-c888-ac30774e7049e11eaf6ba9e5dff9e6c5e361967debf6f4644262f69b0d09f72b3
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container_end_page 2016
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container_title IEEE transactions on electron devices
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creator Jo, Hyeon-Bhin
Yun, Seung-Won
Kim, Jun-Gyu
Baek, Ji-Min
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Kim, Dae-Hyun
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Kim, Sang-Kuk
Yun, Jacob
Kim, Ted
Tsutsumi, Takuya
Sugiyama, Hiroki
Matsuzaki, Hideaki
description
doi_str_mv 10.1109/TED.2020.3045958
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title Sub-30-nm In 0.8 Ga 0.2 As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics
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