Electrical Characteristics and Reliability of Wafer-on-Wafer (WOW) Bumpless Through-Silicon Via

Electrical characteristics and reliability of the wafer-on-wafer (WOW) bumpless through-silicon via (TSV) structure are investigated, and the new lumped circuit model is proposed to simulate the performance of the structure. Including the actual contact resistance in the model, the integrity of the...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2021-07, Vol.68 (7), p.3520-3525
Main Authors: Tsai, Yi-Chieh, Lee, Chia-Hsuan, Chang, Hsin-Chi, Liu, Jui-Han, Hu, Han-Wen, Ito, Hiroyuki, Kim, Young Suk, Ohba, Takayuki, Chen, Kuan-Neng
Format: Article
Language:English
Subjects:
3-D integration
Accelerated tests
bumpless
Cleaning
Contact resistance
Electric contacts
Electromigration
Integrated circuits
Interconnections
Mechanical properties
Periodic structures
Propagation losses
Reliability
Reliability analysis
Resistance
Signal integrity
Stacking
Thermal cycling
Thermal cycling tests
through-silicon via (TSV)
Through-silicon vias
Transmission loss
Vibration
wafer-on-wafer (WOW)
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Electrical characteristics and reliability of the wafer-on-wafer (WOW) bumpless through-silicon via (TSV) structure are investigated, and the new lumped circuit model is proposed to simulate the performance of the structure. Including the actual contact resistance in the model, the integrity of the high-frequency signal can be accurately simulated. For the 12-layer stacked bumpless TSV structure with plasma cleaning at the via bottom, the transmission loss of the signal up to 20 GHz can be lower than 2 dB. High eye height and low jitter at 3.2 Gbps show excellent signal integrity for high bandwidth memory (HBM) applications. In addition, a complete reliability study, including thermal cycling test (TCT), highly accelerated stress test (HAST), and electromigration test, reveals excellent electrical and mechanical properties, indicating that the structure is robust with great potential for 3-D integration.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2021.3082497