Nanoelectromechanical-Switch-Based Ternary Content-Addressable Memory (NEMTCAM)

A tristate-nanoelectromechanical-switch-based ternary content-addressable memory (NEMTCAM) is proposed for the first time. In the proposed unit NEMTCAM cell, a single nanoelectromechanical (NEM) memory switch replaces two static random access memory cells. Due to the monolithic 3-D (M3D) integration...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2021-10, Vol.68 (10), p.4903-4909
Main Authors: Lee, Jae Seong, Choi, Woo Young
Format: Article
Language:English
Subjects:
Associative memory
Force
Leakage current
Memory management
Monolithic 3-D (M3D)
nanoelectromechanical (NEM) memory switch
Nanoelectromechanical systems
Nonvolatile memory
nonvolatile memory (NVM)
Power consumption
Random access memory
Resistance
Static random access memory
Switches
ternary content-addressable memory (TCAM)
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Summary:A tristate-nanoelectromechanical-switch-based ternary content-addressable memory (NEMTCAM) is proposed for the first time. In the proposed unit NEMTCAM cell, a single nanoelectromechanical (NEM) memory switch replaces two static random access memory cells. Due to the monolithic 3-D (M3D) integration and nonvolatile property of NEM memory switches, the proposed NEMTCAM achieves an 86.3% smaller area, 75.0% lower dynamic power consumption, and a 76.6% higher search speed than conventional ternary content-addressable memory (TCAM) in addition to a negligible static leakage current.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2021.3106886