An Extraction Method for Mobility Degradation and Contact Resistance of Graphene Transistors

The intrinsic mobility degradation coefficient, contact resistance, and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different technologies by considering a novel transport model embracing mobility degradation effects within the charge channel control...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2022-07, Vol.69 (7), p.4037-4041
Main Authors: Pacheco-Sanchez, Anibal, Mavredakis, Nikolaos, Feijoo, Pedro C., Jimenez, David
Format: Article
Language:English
Subjects:
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Adaptation models
Channel resistance
Computer architecture
Contact resistance
Degradation
Electronic devices
Field effect transistors
Graphene
graphene field-effect transistor (FET)
Logic gates
Mathematical models
mobility degradation
Parameters
Resistance
Semiconductor devices
Transconductance
Transport equations
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Summary:The intrinsic mobility degradation coefficient, contact resistance, and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different technologies by considering a novel transport model embracing mobility degradation effects within the charge channel control description. By considering the mobility degradation-based model, a straightforward extraction methodology, not provided before, is enabled by applying the concept of the well-known {Y} -function to the {I} - {V} device characteristics. The method works regardless of the gate device architecture. An accurate description of experimental data of fabricated devices is achieved with the underlying transport equation by using the extracted parameters. An evaluation of the channel resistance, enabled by the extracted parameters here, has also been provided.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2022.3176830