An Extraction Method for Mobility Degradation and Contact Resistance of Graphene Transistors

• Published in: IEEE transactions on electron devices 2022-07, Vol.69 (7), p.4037-4041
• Main Authors: Pacheco-Sanchez, Anibal, Mavredakis, Nikolaos, Feijoo, Pedro C., Jimenez, David
• Format: Article
• Language: English
• Subjects: <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">Y -function; Adaptation models; Channel resistance; Computer architecture; Contact resistance; Degradation; Electronic devices; Field effect transistors; Graphene; graphene field-effect transistor (FET); Logic gates; Mathematical models; mobility degradation; Parameters; Resistance; Semiconductor devices; Transconductance; Transport equations
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2022.3176830

The intrinsic mobility degradation coefficient, contact resistance, and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different technologies by considering a novel transport model embracing mobility degradation effects within the charge channel control description. By considering the mobility degradation-based model, a straightforward extraction methodology, not provided before, is enabled by applying the concept of the well-known {Y} -function to the {I} - {V} device characteristics. The method works regardless of the gate device architecture. An accurate description of experimental data of fabricated devices is achieved with the underlying transport equation by using the extracted parameters. An evaluation of the channel resistance, enabled by the extracted parameters here, has also been provided.