Al 2 O 3 /HfO 2 Bilayer Dielectric for Ambipolar SnO Thin-Film Transistors With Superior Operational Stability

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Bibliographic Details
Published in:IEEE transactions on electron devices 2022-08, Vol.69 (8), p.4293-4297
Main Authors: Hong, Ruohao, Tian, Qianlei, Lin, Jun, Wang, Liming, Bu, Tong, Huang, Hao, Qin, Wenjing, Liao, Lei, Zou, Xuming
Format: Article
Language:English
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2022.3184908