Forming-Free HfO 2 -Based Resistive Random Access Memory by X-Ray Irradiation

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Bibliographic Details
Published in:IEEE transactions on electron devices 2022-12, Vol.69 (12), p.6705-6709
Main Authors: Wang, Yu-Bo, Chang, Ting-Chang, Lin, Shih-Kai, Wu, Pei-Yu, Zhang, Yong-Ci, Tan, Yung-Fang, Chen, Wen-Chung, Wu, Chung-Wei, Chou, Sheng-Yao, Zhou, Kuan-Ju, Sun, Li-Chuan, Tsai, Xin-Ying, Sze, Simon M.
Format: Article
Language:English
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2022.3215932