Air Channel Space-Charge-Limited Transistor

A vertical structural air channel transistor with a gate block dielectric layer, which can isolate gate from air channel, was proposed. With the presence of gate block dielectric layer, electrons at the edge of the 2-D electron system (2-DES) formed at gate are prevented to be injected into air chan...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2023-04, Vol.70 (4), p.1-4
Main Authors: Shen, Zhihua, Li, Qiaoning, Wang, Xiao, Ge, Bin, Wu, Shengli, Tian, Jinshou
Format: Article
Language:English
Subjects:
Air channel transistor high cutoff frequency space-charge-limited (SCL) current
Anodes
Cathodes
Current leakage
Cutoff frequency
Dielectrics
Electrons
High temperature
Leakage current
Logic gates
Performance evaluation
Power consumption
Semiconductor devices
Thermionic emission
Transconductance
Transistors
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Summary:A vertical structural air channel transistor with a gate block dielectric layer, which can isolate gate from air channel, was proposed. With the presence of gate block dielectric layer, electrons at the edge of the 2-D electron system (2-DES) formed at gate are prevented to be injected into air channel, which may effectively minish the gate leakage current compared to the conventional vertical structure. The transistor operates in the space-charge-limited (SCL) regime of thermionic emission, which makes it theoretically possess the advantages of high-temperature reliability and low power consumption. Simulation results indicate that this transistor can achieve transconductance of 34.2 \mu S and cutoff frequency of 88.2 GHz by optimizing the dimensional parameters.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2023.3241838