Last-Quantum-Barrier-Free AlGaN Deep Ultraviolet LEDs With Boosted Efficiency

AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) still suffer from poor quantum efficiency and low optical power. Herein, we propose a 273-nm DUV LED architecture by removing the last quantum barrier (LQB), which bridges the active region and hole injection region that significantly boo...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2023-10, Vol.70 (10), p.1-5
Main Authors: Memon, Muhammad Hunain, Yu, Huabin, Jia, Hongfeng, Xiao, Shudan, Wang, Rui, Sun, Haiding
Format: Article
Language:English
Subjects:
AlGaN
Aluminum gallium nitride
bandgap engineering
Charge carrier processes
deep ultraviolet light-emitting diodes (DUV LEDs)
Electric potential
Injection current
Light emitting diodes
Performance evaluation
quantum barriers (QBs)
Quantum efficiency
Quantum wells
quantum wells (QWs)
Radiative recombination
Ultraviolet radiation
Wide band gap semiconductors
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Summary:AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) still suffer from poor quantum efficiency and low optical power. Herein, we propose a 273-nm DUV LED architecture by removing the last quantum barrier (LQB), which bridges the active region and hole injection region that significantly boosts the overall performance of the device. The light output power (LOP) can be remarkably boosted by 147% at an injection current of 65 A/cm ^{\text{2}} in comparison with a conventional LED with LQB, attributing to the effective improvement of electron-blocking capabilities and hole injection efficiency. Additionally, due to the removal of LQB, we found that the thickness of the last quantum well (LQW) has to be optimized to lower electron leakage, which further enhances the efficiency of the device. Such LQB-free DUV LED provides an alternate route to the development of efficient DUV devices.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2023.3301832